Epitaxial orientation and morphology of thin CoSi2 films grown on Si(100): Effects of growth parameters

Abstract

CoSi2 can be grown epitaxially on Si(100) with two dominant epitaxial orientations: CoSi2(100) on Si(100) where [100]CoSi2∥ [100]Si with [011]CoSi2∥ [011]Si , and CoSi2(110) on Si(100) where [011̄]CoSi2 ∥[100]Si with [011]CoSi2 ∥[011]Si . A rotated variant of the CoSi2(110) orientation is also observed where [011]CoSi2 ∥[100]Si with [011̄]CoSi2 ∥[011̄]Si. These films require a template technique in UHV conditions to grow high-quality material. By varying the growth conditions, films which are >95% of either orientations have been obtained. The relationships between these growth parameters and the epitaxial orientation of the resulting thin film are discussed and a possible model is suggested for some particular growth conditions.