Elementary ambipolar field-effect transistor model

1 January 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 33 (1), 145-147
https://doi.org/10.1109/t-ed.1986.22451

Abstract

An ambipolar FET can be operated alternatively in n-channel and p-channel modes. A simple conceptual model is proposed. It considers ohmic source and drain contacts, a gradual channel, and the depletion approximation.

Keywords

MODEL
AMBIPOLAR
OHMIC
FET
DEPLETION
DRAIN
GRADUAL
ELEMENTARY
EFFECT TRANSISTOR

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