Abstract
Light‐emitting p‐n junctions are scanned by an acoustic domain traveling at sound velocity in CdS at room temperature. The light elements are heterojunctions formed by depositing p‐Cu2S on n‐CdS. The acoustic domain is generated in CdS by applying a bias electric field which gives the electrons a drift velocity greater than the shear sound velocity. When the acoustic domain is in the vicinity of a p‐n junction, part of the acoustic energy is transformed into light. As the domain travels between consecutive light elements it replenishes its lost acoustic energy from the bias electric field.