Metallicity and gap states in tunneling to Fe clusters in GaAs(110)
- 25 September 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (13), 1416-1419
- https://doi.org/10.1103/physrevlett.63.1416
Abstract
We report the characteristics of tunneling to a GaAs(110) substrate with distinct, nanometer-size Fe clusters, as a function of distance from and size of the clusters. We show that Fe clusters of volumes ∼150 A, corresponding to ≃13 atoms, are observed to be nonmetallic with a gap at the Fermi level. Larger clusters with >35 atoms begin to show metallic characteristics. We observe a continuum of cluster-induced gap states in tunneling to the GaAs substrate surrounding the metallic Fe clusters. The decay length of these states has a minimum decay of 3.4 Å at midgap and diverges at the valence- and conduction-band edges.
Keywords
This publication has 16 references indexed in Scilit:
- Schottky-Barrier Formation and MetallicityPhysical Review Letters, 1989
- Correlation betweenpinning and development of metallic character in Ag overlayers on GaAs(110)Physical Review Letters, 1988
- Single-Electron Tunneling Observed with Point-Contact Tunnel JunctionsPhysical Review Letters, 1988
- Probing the Transition from van der Waals to Metallic Mercury ClustersPhysical Review Letters, 1988
- Dynamics of tunneling to and from small metal particlesPhysical Review B, 1988
- Observation of single-electron charging effects in small tunnel junctionsPhysical Review Letters, 1987
- Microscopic metal clusters and Schottky barrier formationPhysical Review Letters, 1987
- Noble- and transition-metal clusters: Thedbands of silver and palladiumPhysical Review B, 1986
- Coulomb blockade of single-electron tunneling, and coherent oscillations in small tunnel junctionsJournal of Low Temperature Physics, 1986
- Schottky Barrier Heights and the Continuum of Gap StatesPhysical Review Letters, 1984