Abstract
A novel method, based on the measurement of potential‐modulated microwave reflectivity changes, is proposed for the deconvolution of the impedance of the semiconductor/electrolyte interface. Experimental results for the silicon/aqueous fluoride system show that this method can be used to separate space‐charge and surface‐capacitance contributions. It is shown that the pH dependence of the flatband potential of n‐Si(111) in fluoride solutions is Nernstian from pH 1.2 to 13.