The effect of charge trapping on the spectrometer performance of p-i-n semiconductor detectors
- 15 September 1970
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 86 (2), 245-252
- https://doi.org/10.1016/0029-554x(70)90707-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Trapping and detrapping effects in lithium-drifted germanium and silicon detectorsNuclear Instruments and Methods, 1970
- The effects of carrier trapping in semiconductor gamma-ray spectrometersNuclear Instruments and Methods, 1969
- Performance of Si(Li) detectors over a wide temperature rangeNuclear Instruments and Methods, 1969
- Gamma Response of Semi-insulating Material in the Presence of Trapping and DetrappingJournal of Applied Physics, 1969
- Bulk Space Charge and Transient Photoconductivity in Amorphous SeleniumJournal of Applied Physics, 1969
- The shape of pulses generated by alpha-particles in silicon drifted detectorsNuclear Instruments and Methods, 1968
- Use of collimated gamma-ray beams in the study of Ge(Li) detectorsNuclear Instruments and Methods, 1968
- Rekombinationsverluste und IHR einfluss auf das Auflösungsvermögen von p-i-n-Zählern Sowie einige Messmethoden für τ, μ und die HomogenitätCzechoslovak Journal of Physics, 1966