Temperature dependence of the delay time between the current pulse and the laser emission of GaAs laser diodes

1 January 1967

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 3 (12), 533-534
https://doi.org/10.1049/el:19670417

Abstract

The temperature dependence of the delay time td has been measured for diffused-junction GaAs laser diodes above 80°K. A temperature range is found where dtd/dT becomes negative.

Keywords

JUNCTION
DTD/DT
PULSE
DELAY TIME
TEMPERATURE DEPENDENCE
DIODES
GAAS

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