Computer studies of boron ion channeling in silicon single crystals
- 1 April 1972
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 13 (3-4), 237-242
- https://doi.org/10.1080/00337577208231185
Abstract
The motion of 200 keV B ions in the [111] direction in a silicon single crystal has been investigated using a computer simulation method. Profiles of the depth distribution of implanted ions for both an ideal crystal and a crystal with thermal vibrations have been obtained. A study of the defect distribution has been carried out.Keywords
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