ELECTRON EMISSION FROM A ``COLD-CATHODE'' GaAs p-n JUNCTION
- 1 April 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (7), 214-216
- https://doi.org/10.1063/1.1652783
Abstract
Electron emission into vacuum has been observed from a forward‐biased Cs‐ and O‐treated GaAs p‐n junction. The device was operated at room temperature with dc bias voltage. The effective efficiency of the device (emission current divided by internal diode current eligible for emission) was 0.05%, while the over‐all efficiency of the device (emission current divided by total diode current) was 10−6. The low over‐all efficiency is explained in terms of sample geometry and surface activation.Keywords
This publication has 2 references indexed in Scilit:
- The Effective Ionization Rate for Hot Carriers in GaAs†International Journal of Electronics, 1966
- A proposed p-n junction cathodeProceedings of the IEEE, 1966