Optoelectronic properties of coupled cavity semiconductor lasers
- 15 April 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (8), 735-737
- https://doi.org/10.1063/1.94899
Abstract
Differential voltage-current characteristics of coupled cavity semiconductor lasers are studied experimentally. Lasing thresholds of individual cavities, regions of single mode or multimode oscillation, or mode hop locations are easily obtained from the analysis. The optoelectronic properties can be used for monitoring operating states of the lasing system without requiring external optical elements.Keywords
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