Conductance oscillation characteristics of GaAs Schottky wrap-gate single-electron transistors
- 1 December 1999
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 272 (1-4), 88-91
- https://doi.org/10.1016/s0921-4526(99)00373-7
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
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