Excimer laser projection photoetching
- 15 July 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (2), 586-588
- https://doi.org/10.1063/1.333923
Abstract
Direct photoetching of various resists and polymers with a 193-nm ArF excimer laser has been demonstrated by imaging a mask through a projection lens. Feature sizes ranging from 2 to 20 μm have been cleanly etched in 1-μm-thick films.Keywords
This publication has 2 references indexed in Scilit:
- Direct high-resolution excimer laser photoetchingApplied Physics A, 1984
- Self-developing photoetching of poly(ethylene terephthalate) films by far-ultraviolet excimer laser radiationApplied Physics Letters, 1982