Low-threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM VPE

Abstract

The letter describes the characteristics of a graded-refractive-index (GRIN) separate-confinement-heterostructure (SCH) laser grown by organometallic vapour-phase-epitaxy (OM VPE). The structure has an average threshold current density of 410 A cm−2 for a chip size (190 μm × 392 μm) which decreases to 260 A cm−2 for a cavity length of 1352 μm. The structure has a T0 of between 154 and 171 K and an internal quantum efficiency of 90% ± 10%.