Improved Uniformity of Resistivity Distribution in LEC Semi-Insulating GaAs Produced by Annealing
- 1 August 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (8A), L602-605
- https://doi.org/10.1143/jjap.23.l602
Abstract
Two-dimensional distribution of resistivity in two-inch diameter crystals of LEC semi-insulating GaAs has been studied by the three-electrode guard method. Results are given in the form of a contour map for the wafers before and after annealing. Very significant fluctuations in resistivity on a 280 µm scale are observed for as-grown crystals, although the average of resistivity corresponds inversely to etch pit densities. The homogeneity of crystal grown at an 18 mm/h pulling rate, about two times faster than usual, is remarkably improved by annealing at 850°C for 20 minutes or longer.Keywords
This publication has 3 references indexed in Scilit:
- Optical Observation of Inhomogeneity of Chromium-Doped Semi-Insulating GaAsJapanese Journal of Applied Physics, 1984
- Study of Two Different Deep Levels in Undoped LEC SI–GaAs by Photoluminescence SpectroscopyJapanese Journal of Applied Physics, 1983
- Resistivity, Hall Mobility and Leakage Current Variations in Undoped Semi-Insulating GaAs Crystal Grown by LEC MethodJapanese Journal of Applied Physics, 1983