Coherent Transfer of Spin through a Semiconductor Heterointerface
- 31 January 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 84 (5), 1015-1018
- https://doi.org/10.1103/physrevlett.84.1015
Abstract
Spin transport between two semiconductors of widely different band gaps is time resolved by two-color pump-probe optical spectroscopy. Electron spin coherence is created in a GaAs substrate and subsequently appears in an adjacent ZnSe epilayer at temperatures ranging from 5 to 300 K. The data show that spin information can be protected by transport to regions of low spin decoherence, and regional boundaries used to control the resulting spin coherent phase.Keywords
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