Oxidation-induced defects in NiAl
- 1 September 1973
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 28 (3), 639-650
- https://doi.org/10.1080/14786437308221008
Abstract
The annealing of voids and vacancy dislocation loops previously found in slowly cooled crystals of NiAl (Fraser, Loretto, Smallman and Wasilewski, 1971) has been studied using transmission electron microscopy. It is observed that both types of defect grow during annealing even when it is carried out in a vacuum of about 10−7 torr and that the detailed behaviour is consistent with vacancy introduction by surface oxidation. The occurrence of voids in as-grown single crystals, and the formation of vacancy-type loops in quenched NiAl (Ball and Smallman 1968) may now be interpreted in terms of surface oxidation rather than a low energy of formation of vacancies in NiAl.Keywords
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