Physical principles of the single-transistor effect
- 15 December 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 58 (24), 16407-16417
- https://doi.org/10.1103/physrevb.58.16407
Abstract
Starting with the physics of tunneling transport through a molecule, we describe the principles underlying electrical amplification effects of a molecule. We discuss in detail the consequences of intramolecular electronic-level repulsion, an effect induced by compression of the molecule, which leads to an exponential variation of the current for a minute compression of the molecule. This detailed understanding underpins the amplifier. Using a planar configuration and an independent electromechanical grid, a transistor effect results from this repulsion effect.
Keywords
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