The effect of the growth rate on the low pressure metalorganic vapour phase epitaxy of GaAs/Ge heterostructures
- 1 December 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 125 (3-4), 440-448
- https://doi.org/10.1016/0022-0248(92)90283-o
Abstract
No abstract availableKeywords
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