Weak-Field Magnetoresistance inp-Type Silicon

Abstract

Measurements of the three weak-field magnetoresistance coefficients and the Hall mobility have been made at a number of different temperatures between 77°K and 350°K on $p$-type silicon samples ranging in resistivity from 0.15 to 115 ohm-cm. The results indicate a marked temperature dependence of the anisotropies of the energy band structure and/or the scattering. The weak-field magnetoresistance coefficients happen to satisfy nearly the same symmetry relations above about 275°K as those satisfied by $n$-type germanium.