Optoelectronic logic operations by cleaved-coupled-cavity semiconductor lasers
- 1 November 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 19 (11), 1621-1625
- https://doi.org/10.1109/jqe.1983.1071769
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- High-speed direct single-frequency modulation with large tuning rate and frequency excursion in cleaved-coupled-cavity semiconductor lasersApplied Physics Letters, 1983
- On the Physical Limits of Digital Optical Switching and Logic ElementsBell System Technical Journal, 1982
- Bistability and pulsations in semiconductor lasers with inhomogeneous current injectionIEEE Journal of Quantum Electronics, 1982
- InGaAsP/InP (1.3 μm) buried-crescent lasers with separate optical confinementElectronics Letters, 1982
- Solid state: Bistable optical devices promise subpicosecond switching: Extensive research in materials and phenomena could lead to their ultimate use in optical communications, despite high power dissipationIEEE Spectrum, 1981
- Bistable operation in semiconductor lasers with inhomogeneous excitationElectronics Letters, 1981
- Amplification in cleaved-substrate lasersIEEE Journal of Quantum Electronics, 1980
- GaAs laser amplifiersIEEE Journal of Quantum Electronics, 1968