p-n junction formation in boron-deposited silicon by laser-induced diffusion

Abstract

A technique for p‐n junction formation in silicon, based on deposition of boron on silicon at room temperature followed by laser irradiation is described. Transmission electron microscopy and electrical measurements indicate that as a result of the laser irradiation the boron is dissolved in the silicon and becomes electrically active. Diode characteristics of p‐n junctions produced by this technique are quite good. The dopant profile distribution has been obtained using secondary ion mass spectrometry and is in qualitative agreement with simplified theoretical calculations.