Effect of Water Vapor on Grown Germanium and Silicon np Junction Units

Abstract

The effect of water vapor on the photoresponse curves and reverse current characteristics of germanium and silicon np junction units has been investigated. It is concluded that changes in surface recombination velocity are only important at low relative humidities. Channel conduction accounts for the increased current of a silicon unit but another mechanism must be postulated for the germanium case. The possibility of this being ionic conduction is discussed.