Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM
- 1 December 2008
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 1-4
- https://doi.org/10.1109/iedm.2008.4796680
Abstract
We investigate extremely low programming current and fast switching time of a perpendicular tunnel-magnetoresistance (P-TMR) for spin-transfer torque using a P-TMR cell of 50 nm-diameter. A L10-crystalline ordered alloy is used as a free layer that has excellent thermal stability and a damping constant of about 0.03. The programming current of 49 uA and the switching time of 4 nsec are also demonstrated.Keywords
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