Oxygen pressure dependence of the retrogrowth of oxidation-induced stacking faults in (100) silicon
- 1 April 1978
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (4), 2513-2516
- https://doi.org/10.1063/1.325102
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Oxygen partial-pressure dependence of the oxidation-induced surface stacking faults in (100) n siliconJournal of Applied Physics, 1977
- Role of point defects in the growth of the oxidation-induced stacking faults in siliconPhysical Review B, 1977
- Stacking Fault Generation Suppression and Grown-In Defect Elimination in Dislocation Free Silicon Wafers by HCl OxidationJapanese Journal of Applied Physics, 1976
- Anomalous temperature effect of oxidation stacking faults in siliconApplied Physics Letters, 1975
- On the annihilation of oxidation induced stacking faults in siliconPhilosophical Magazine, 1974
- Silicon Wafer Annealing Effect in Loop Defect GenerationJapanese Journal of Applied Physics, 1974
- The Current Understanding of Charges in the Thermally Oxidized Silicon StructureJournal of the Electrochemical Society, 1974
- Oxidation, defects and vacancy diffusion in siliconPhilosophical Magazine, 1969