The wall energy of a bubble domain is influenced by the magnetostrictive anisotropy energy and the crystalline anisotropy energy. Expressions were derived for wall energy incorporating both anisotropy terms when the epitaxial film deposition plane is the (111), (110) or (001). Calculations utilizing these expressions indicate that at stress values of 1.5(10)9 dynes/cm2 the wall energy may be from two to four times that of an unstressed film. A change of wall energy of these magnitudes at a defect would pin bubble domains in a device structure. The figures show the results for two different garnet types. Table I gives the constants used in making the calculations.