Low-frequency impurity hopping Hall conductivity
- 9 July 1973
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 6 (13), 2158-2168
- https://doi.org/10.1088/0022-3719/6/13/015
Abstract
A temperature diagrammatic analysis is used to investigate the low-frequency three-site impurity hopping Hall conductivity for doped semiconductors, originally treated semiclassically by Holstein. The result agrees with that of Holstein. Discussions are given on the work of Aldea who recently obtained a different result from the above-cited work.Keywords
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