Subhalf-micrometer p-channel MOSFET's with 3.5-nm gate Oxide fabricated using X-ray lithography

1 June 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 8 (6), 266-268
https://doi.org/10.1109/EDL.1987.26625

Abstract

Subhalf-micrometer p-channel MOSFET's with ultra-thin gate oxide (3.5 nm) have been fabricated using X-ray lithography and electron cyclotron resonance (ECR) plasma etching. The fabricated MOSFET's with 0.2-µm channel lengths show long-channel behavior and extremely high (200 mS/mm) transconductance.

Keywords

X-RAY LITHOGRAPHY
ETCHING
PLASMA APPLICATIONS
PLASMA X-RAY SOURCES
ANNEALING
ELECTRONS
CYCLOTRONS
RESONANCE
PLASMA DEVICES
TRANSCONDUCTANCE

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