The effects of band bending on the photoconductivity in a-Si:H
- 31 March 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 117-118, 883-885
- https://doi.org/10.1016/0378-4363(83)90683-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Photothermal deflection spectroscopy and detectionApplied Optics, 1981
- Photoconductivity, trapping, and recombination in discharge-produced, hydrogenated amorphous siliconPhysical Review B, 1981
- Determination of the density of gap states: field effect and surface adsorptionSolar Cells, 1980
- Derivation of the low-energy optical-absorption spectra of-Si: H from photoconductivityPhysical Review B, 1980
- Optical absorption by GAP states in hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1980