A Mechanism for Water Induced Excess Reverse Dark Current on Grown Germanium NV-P Junctions

1 September 1954

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE

Vol. 42 (9), 1367-1370
https://doi.org/10.1109/jrproc.1954.274567

Abstract

An ionic conduction process in the multilayers of water adsorbed on a germanium n-p junction bar is proposed to explain the increase in reverse dark current observed when the relative humidity to which the unit is exposed is increased. Experimental evidence supporting this postulate is given and discussed.

Keywords

DARK CURRENT
GERMANIUM
ENTROPY
HUMIDITY
SURFACE TREATMENT
TEMPERATURE
CONDUCTIVITY
WATER HEATING
IMPURITIES
ATOMIC MEASUREMENTS

This publication has 3 references indexed in Scilit:

$n$ -Type Surface Conductivity on $p$ -Type Germanium
Physical Review B, 1953
Properties of the M-1740 P-N Junction Photocell
Proceedings of the IRE, 1952
Insulating properties of solid dielectrics
Bulletin of the Bureau of Standards, 1915

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