Growth and characterization of a delta-function doping layer in Si
- 27 April 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (17), 1164-1166
- https://doi.org/10.1063/1.97950
Abstract
We present a procedure whereby a sheet of donor atoms is incorporated in (100) Si during molecular beam epitaxial growth. Analysis by secondary ion mass spectroscopy and transmission electron microscopy shows that the width of such δ-function doping layers is only a few lattice planes. Tunneling spectroscopy and transport measurements give evidence for quantum confinement of the electronic charge in the layer and thus confirm the narrow width.Keywords
This publication has 7 references indexed in Scilit:
- Schottky-barrier tunneling spectroscopy for the electronic subbands of a δ-doping layerSolid State Communications, 1986
- Mobility Enhancement in Modulation‐Doped Si ‐ Si1 − x Ge x Superlattice Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1986
- Secondary implantation of Sb into Si molecular beam epitaxy layersApplied Physics Letters, 1985
- Potential enhanced Sb and As doping in Si molecular beam epitaxyApplied Physics Letters, 1985
- Evaporative antimony doping of silicon during molecular beam epitaxial growthJournal of Applied Physics, 1984
- Doping of silicon in molecular beam epitaxy systems by solid phase epitaxyApplied Physics Letters, 1984
- A new effusion cell arrangement for fast and accurate control of material evaporation under vacuum conditionsJournal of Vacuum Science & Technology A, 1984