Reactive sticking coefficients for silane and disilane on polycrystalline silicon

Abstract

Reactive sticking coefficients (RSCs) were measured for silane and disilane on polycrystalline silicon for a wide range of temperature and flux (pressure) conditions. The data were obtained from deposition‐rate measurements using molecular beam scattering and a very low‐pressure cold‐wall reactor. The RSCs have nonlinear Arrhenius temperature dependencies and decrease with increasing flux at low (710 °C) temperatures. Several simple models are proposed to explain these observations. The results are compared with previous studies of the SiH₄/Si(s) reaction and low‐pressure chemical vapor deposition‐rate measurements.