Modulated semiconductor structures: An overview of some basic considerations for growth and desired electronic structure

Abstract

An overview of the underlying considerations of importance for fabrication of lattice-matched modulated semiconductor structures and their electronic structure is presented. Particular consideration is given to a comparative discussion of group III–V/III–V and group IV/III–V heterointerfaces and the expected role of substrate crystallographic orientation in governing their growth and properties. Rather than presenting an exhaustive glossary of systems fabricated, the article focuses on basic concepts. Note is made of areas requiring greater and systematic investigation. A few variations on the basic technique of molecular beam epitaxy (MBE) are noted and suggested to exploit the kinetic aspects of MBE for creation of a variety of metastable phases.