Switchable bicolor (5.5–9.0 μm) infrared detector using asymmetric GaAs/AlGaAs multiquantum well

Abstract
Electrical switching of a bispectral infrared photoconductor is demonstrated with GaAs/AlGaAs asymmetric step multiquantum wells, presenting bound-to-bound (tunable 8.5–9.0 μm) and bound-to-extended (≊5.5 μm) intersubband transitions of similar oscillator strengths. The bound-to-bound photoresponse is switched on by applying an electric field of sufficient magnitude to permit the collection of the photoexcited bound electrons by tunneling.