A review of some dominant mechanisms in ion plating is made. Factors influencing throwing power and film quality are discussed and the damaging effects of a high ambient gas background are considered with a view toward minimizing the harmful effects of contaminant gas background. The physical mechanisms involved in an ion beam deposition process [S. Aisenberg and R. Chabot, J. Appl. Phys. 42, 2953 (1972)] are examined. The effects of chamber pressure, electrical bias arrangements, and the introduction of a coevaporant source are discussed with regard to deposition rate, ultimate film quality, and throwing power of the system.