p-n junction—Schottky barrier hybrid diode
- 1 January 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 16 (1), 58-63
- https://doi.org/10.1109/t-ed.1969.16565
Abstract
A new fabrication technique for passivated silicon Schottky barrier diodes is described. It is shown that the p-n junction guard ring or "hybrid" approach produces Schottky barriers whose forward and reverse electrical characteristics are in excellent agreement with simple theory, and that the excess noise normally found in passivated Schottky barrier diodes has been significantly reduced. The influence of metal barrier height and diffusion profile on the charge storage characteristics of these devices is discussed and examined experimentally.Keywords
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