Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
- 2 December 1991
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 115 (1-4), 628-633
- https://doi.org/10.1016/0022-0248(91)90816-n
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Zn related electroluminescent properties in MOVPE grown GaNJournal of Crystal Growth, 1988
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- Epitaxial Growth of Undoped and Mg-Doped GaNJapanese Journal of Applied Physics, 1976
- Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substratesJournal of Crystal Growth, 1971