Shift of the Gate Threshold Voltage of MOS Transistors dne to the Introduction of Shallow Impurities

Abstract

It is possible to shift the gate threshold voltage of MOS transistors with little sacrifice of other device performances by introducing shallow level impurities only into a region near the semiconductor surface under the gate. Some theoretical information is given which may be useful for designing MOS transistors in an attempt to realize such a shift. The effects of the impurity introduction on the characteristics of MOS diode structures are also described.