Highly anisotropic photoenhanced wet etching of n-type GaN
- 13 October 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (15), 2151-2153
- https://doi.org/10.1063/1.119365
Abstract
A room-temperature photoelectrochemical etching process for -type GaN films using a 0.04 M KOH solution and Hg arc lamp illumination is described. The process provides highly anisotropic etch profiles and high etch rates (>300 nm/min) at moderate light intensities (50 @365 nm). The etch rate and photocurrent are characterized as a function of light intensity for stirred and unstirred solutions, and the etch process is found to be diffusion limited for light intensities greater than 20 @365 nm. A reaction mechanism for the etch process is proposed.
Keywords
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