Intrinsic Spin Hall Effect in the Two-Dimensional Hole Gas
- 29 June 2005
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 95 (1), 016801
- https://doi.org/10.1103/physrevlett.95.016801
Abstract
We show that two types of spin-orbit coupling in the 2 dimensional hole gas, with and without inversion symmetry breaking, contribute to the intrinsic spin-Hall effect. Furthermore, the vertex correction due to impurity scattering vanishes in both cases, in sharp contrast to the case of usual Rashba coupling in the electron band. Recently, the spin-Hall effect in a hole doped GaAs semiconductor has been observed experimentally by Wunderlich et al. [ Phys. Rev. Lett. 94, 047204 (2005).]. From the fact that the lifetime broadening is smaller than the spin splitting, and the fact impurity vertex corrections vanish in this system, we argue that the observed spin-Hall effect should be in the intrinsic regime.Keywords
All Related Versions
This publication has 19 references indexed in Scilit:
- Spin-Hall transport of heavy holes in III-V semiconductor quantum wellsPhysical Review B, 2005
- Spin-Hall effect in a disordered two-dimensional electron systemPhysical Review B, 2005
- Nonvanishing spin Hall currents in disordered spin-orbit coupling systemsPhysical Review B, 2005
- Observation of the Spin Hall Effect in SemiconductorsScience, 2004
- Suppression of the persistent spin Hall current by defect scatteringPhysical Review B, 2004
- Absence of vertex correction for the spin Hall effect in-type semiconductorsPhysical Review B, 2004
- Two-dimensional hole precession in an all-semiconductor spin field effect transistorPhysical Review B, 2004
- Anomalous Rashba spin splitting in two-dimensional hole systemsPhysical Review B, 2002
- Spin-orbit induced anisotropy in the magnetoconductance of two-dimensional metalsPhysical Review B, 2001
- Non-Abelian geometric phases and conductance of spin-holesPhysical Review B, 1998