On the diffusivity of holes in silicon

Abstract

The longitudinal diffusion coefficient of holes in Si has been measured with time‐of‐flight and noise techniques at 300 K for field strengths ranging from about 0.5 up to 40 kV/cm. As the electric field increases, the diffusion coefficient decreases to about 0.3 of its Ohmic value much more sharply than results previously reported in literature. The experimental results are interpreted by a Monte Carlo simulation which includes warping and nonparabolicity effects of the heavy‐hole band.