Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors
- 13 January 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (2), 133-135
- https://doi.org/10.1063/1.96974
Abstract
A new technique is presented for separating the threshold‐voltage shift of a metal‐oxide‐semiconductor transistor into shifts due to interface traps and trapped‐oxide charge. This technique is applied to threshold‐voltage shifts on an n‐channel transistor that result from ionizing radiation.Keywords
This publication has 10 references indexed in Scilit:
- Electronic traps and P b centers at the Si/SiO2 interface: Band-gap energy distributionJournal of Applied Physics, 1984
- Hole traps and trivalent silicon centers in metal/oxide/silicon devicesJournal of Applied Physics, 1984
- Relationship between MOSFET degradation and hot-electron-induced interface-state generationIEEE Electron Device Letters, 1984
- Interface trap generation in silicon dioxide when electrons are captured by trapped holesJournal of Applied Physics, 1983
- Generation of Oxide Charge and Interface States by Ionizing Radiation and by Tunnel Injection ExperimentsIEEE Transactions on Nuclear Science, 1982
- Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfacesIEEE Transactions on Electron Devices, 1980
- Frequency and temperature tests for lateral nonuniformities in MIS capacitorsIEEE Transactions on Electron Devices, 1977
- Negative bias stress of MOS devices at high electric fields and degradation of MNOS devicesJournal of Applied Physics, 1977
- Comparison of interface-state generation by 25-keV electron beam irradiation in p-type and n-type MOS capacitorsApplied Physics Letters, 1975
- Radiation-Induced Perturbations of the Electrical Properties of the Silicon-Silicon Dioxide InterfaceIEEE Transactions on Nuclear Science, 1969