4- and 13-GHz tuned amplifiers implemented in a 0.1-μm CMOS technology on SOI, SOS, and bulk substrates
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 33 (12), 2066-2073
- https://doi.org/10.1109/4.735548
Abstract
Four- and 13-GHz tuned amplifiers have been implemented in a partially scaled 0.1-1 μm CMOS technology on bulk, silicon-on-insulator (SOI), and silicon-on-sapphire (SOS) substrates. The 4-GHz bulk, SOI, and SOS amplifiers exhibit forward gains of 14, 11, and 12.5 dB and Fmin's of 4.5 (bulk) and 3.5 db (SOS). The 13-GHz SOS and SOI amplifiers exhibit gains of 15 and 5.3 dB and Funn's of 4.9 and 7.8 dB. The 4-GHz bulk amplifier has the highest resonant frequency among reported bulk CMOS amplifiers, while the 13-GHz SOS and SOI amplifiers are the first in a CMOS technology to have tuned frequencies greater than 10 GHz. These and other measurement results suggest that it may be possible to implement 20-GHz tuned amplifiers in a fully scaled 0.1-1 μm CMOS processKeywords
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