Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO2 (101) thin films
- 1 February 2010
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 107 (3), 033707
- https://doi.org/10.1063/1.3298467
Abstract
As-grown and oxygen plasma treated -type tin dioxide (101) thin films were investigated regarding the properties of Au contacts, surface structure, and band bending. The plasma treatment was performed in a conventional oxygen plasma cleaning system with maximum oxygen ion energies of 400 eV. Whereas the as-deposited film formed non-Schottky contacts with Au, the oxygen plasma treated films formed Schottky contacts with Au. Capacitance-voltage and differential Hall measurements indicated the introduction of bulk electron traps up to several 100 nm below the surface due to the oxygen plasma treatment. Angle resolved x-ray photoelectron spectroscopy (AR-XPS) revealed a surface accumulation layer on the as-grown film that was absent after the plasma treatment. These measurements further revealed chemical differences between the as-deposited and the plasma treated surfaces. All films had bonds. The AR-XPS signal intensity increased after plasma treatment, indicating that the oxygen plasma damaged the surface. Additionally, an adlayer was formed due to the oxygen plasma treatment. The damaged layer due to oxygen ion bombardment, oxygen adsorption layer, and possibly bulk traps depleted the surface carriers which enabled the formation of a Schottky contact with Au.
Keywords
This publication has 43 references indexed in Scilit:
- Rectifying behavior of individual SnO2 nanowire by different metal electrode contactsMicroelectronic Engineering, 2008
- Doped-Fluorine on Electrical and Optical Properties of Tin Oxide Films Grown by Ozone-Assisted Thermal CVDJournal of the Electrochemical Society, 2007
- Tin oxide transparent thin-film transistorsJournal of Physics D: Applied Physics, 2004
- Contact Resistivity of Metallized Tin Oxide SurfacesJournal of the Electrochemical Society, 2000
- Contact Resistance of SnO2 Films Determined by the Transmission Line Model MethodJapanese Journal of Applied Physics, 1998
- Database of correction parameters for the elastic scattering effects in XPSSurface and Interface Analysis, 1995
- Calculations of electron inelastic mean free paths. V. Data for 14 organic compounds over the 50–2000 eV rangeSurface and Interface Analysis, 1994
- Schottky-barrier and conductivity gas sensors based upon Pd/SnO2 and Pt/TiO2Sensors and Actuators B: Chemical, 1991
- Resonant-photoemission study of: Cationic origin of the defect band-gap statesPhysical Review B, 1990
- Vapor Reaction Growth of SnO2 Single Crystals and Their PropertiesJapanese Journal of Applied Physics, 1965