Picosecond correlation measurements of indium phosphide photoconductors
- 1 February 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (3), 215-217
- https://doi.org/10.1063/1.93896
Abstract
The response times of InP photoconductors under picosecond optical illumination are observed to differ widely depending on whether the electrical bias is dc or a short pulse. The use a pulsed bias gives a slower response (>100 ps) which is more characteristic of the intrinsic material properties, than a dc bias which gives a very fast (<15 ps) response and can be attributed to imperfect contacts.Keywords
This publication has 3 references indexed in Scilit:
- Picosecond photoconductivity in radiation-damaged silicon-on-sapphire filmsApplied Physics Letters, 1981
- Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductorsApplied Physics Letters, 1980
- High-speed InP optoelectronic switchApplied Physics Letters, 1979