ESD failure modes: characteristics mechanisms, and process influences
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (2), 430-436
- https://doi.org/10.1109/16.121703
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Aluminum spiking at contact windows in Al/Ti-W/SiApplied Physics Letters, 1988
- The effects of interconnect process and snapback voltage on the ESD failure threshold of NMOS transistorsIEEE Transactions on Electron Devices, 1988
- Thermal response of integrated circuit input devices to an electrostatic energy pulseIEEE Transactions on Electron Devices, 1987
- NMOS protection circuitryIEEE Transactions on Electron Devices, 1985