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Behavior of intrinsic Si point defects during annealing in vacuum
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Behavior of intrinsic Si point defects during annealing in vacuum
Behavior of intrinsic Si point defects during annealing in vacuum
HG
H.-J. Gossmann
H.-J. Gossmann
CR
C. S. Rafferty
C. S. Rafferty
FU
F. C. Unterwald
F. C. Unterwald
TB
T. Boone
T. Boone
TM
T. K. Mogi
T. K. Mogi
M. O. Thompson
M. O. Thompson
HL
H. S. Luftman
H. S. Luftman
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11 September 1995
journal article
Published by
AIP Publishing
in
Applied Physics Letters
Vol. 67
(11)
,
1558-1560
https://doi.org/10.1063/1.114733
Abstract
No abstract available
Keywords
SUPERLATTICES
PROCESS SIMULATION
Cited by 26 articles