Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistor
- 15 November 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (10), 1114-1116
- https://doi.org/10.1063/1.95036
Abstract
The high offset voltage of an Npn AlGaAs/GaAs heterojunction bipolar transistor prepared by liquid phase epitaxy is proved to be equal to the turn-on voltage difference between emitter-base heterojunction and base-collector homojunction. The potential spike at the emitter-base heterointerface is experimentally confirmed by observing an activated transport process and a reachthrough effect under reverse operation. It is believed that the electron thermionic emission process plays an important role in determining the p-n junction I-V characteristics.Keywords
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