The metallization systems Al/Ti (and Si/Al/Ti) were studied as contact metallurgies applied to N+ silicon with contact size around 1 μm2 and junction depth as shallow as 0.1 μm. Electrical test results show that contact resistivity is much lower than that provided by contact metallurgy, ranging from low 10−6 to middle 10−7 Ω‐cm2 depending on the surface dopant concentration. Junction leakage is extremely low and does not show significant degradation after 5 hr annealing at 400°C or 30 min annealing at 450°C. Contact resistance of 15 Ω per contact has been achieved on 1 μm2 siz e contacts.