Ion bombardment effect on the growth of a-Si:H films deposited from a pure silane plasma
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 735-738
- https://doi.org/10.1016/0022-3093(83)90276-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Dependence of hydrogen evolution from a-Si: H on boron doping and substrate potentialSolar Energy Materials, 1982
- Fast polarization modulated ellipsometer using a microprocessor system for digital Fourier analysisReview of Scientific Instruments, 1982
- Plasma spectroscopy—Glow discharge deposition of hydrogenated amorphous siliconThin Solid Films, 1982
- Proton-magnetic-resonance studies of microstructure in plasma-deposited amorphous-silicon—hydrogen filmsPhysical Review B, 1981
- Silane dissociation mechanisms and thin film formation in a low pressure multipole dc dischargeApplied Physics Letters, 1980