High Nitrogen Doping During Bulk Growth of SiC
- 1 January 2004
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 35 references indexed in Scilit:
- Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD ParametersMaterials Science Forum, 2003
- Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbideJournal of Applied Physics, 2000
- Photothermal ionization spectroscopy of shallow nitrogen donor states in 4H–SiCJournal of Applied Physics, 2000
- Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect MeasurementJapanese Journal of Applied Physics, 1999
- Development of large single-crystal SiC substratesElectronics and Communications in Japan (Part II: Electronics), 1998
- Nitrogen and aluminum implantation in high resistivity silicon carbideJournal of Applied Physics, 1997
- Nitrogen Ion Implantation into α-SiC Epitaxial LayersPhysica Status Solidi (a), 1997
- Optical Characterization of Silicon Carbide PolytypesPhysica Status Solidi (a), 1997
- SiC Dopant Incorporation Control Using Site-Competition CVDPhysica Status Solidi (b), 1997
- Nitrogen donors and deep levels in high-quality 4H–SiC epilayers grown by chemical vapor depositionApplied Physics Letters, 1995